Method of controlling polishing

ABSTRACT

A method of controlling polishing includes polishing a substrate of a non-metallic layer undergoing polishing and a metal layer underlying the non-metallic layer; storing a metal reference spectrum, the metal reference spectrum being a spectrum of light reflected from a same metal material as the metal layer; measuring a sequence of raw spectra of light reflected from the substrate during polishing with an in-situ optical monitoring system; normalizing each raw spectrum in the sequence of spectra to generate a sequence of normalized spectra, of which normalizing includes a division operation where the measured spectrum is in the numerator and the metal reference spectrum is in the denominator; and determining at least one of a polishing endpoint or an adjustment for a polishing rate based on at least one normalized predetermined spectrum from the sequence of normalized spectra.

TECHNICAL FIELD

The present disclosure relates to polishing control methods, e.g.,during chemical mechanical polishing of substrates.

BACKGROUND

An integrated circuit is typically formed on a substrate by thesequential deposition of conductive, semiconductive, or insulativelayers on a silicon wafer. One fabrication step involves depositing afiller layer over a non-planar surface and planarizing the filler layer.For certain applications, the filler layer is planarized until the topsurface of a patterned layer is exposed. A conductive filler layer, forexample, can be deposited on a patterned insulative layer to fill thetrenches or holes in the insulative layer. After planarization, theportions of the conductive layer remaining between the raised pattern ofthe insulative layer form vias, plugs, and lines that provide conductivepaths between thin film circuits on the substrate. For otherapplications, such as oxide polishing, the filler layer is planarizeduntil a predetermined thickness is left over the non planar surface. Inaddition, planarization of the substrate surface is usually required forphotolithography.

Chemical mechanical polishing (CMP) is one accepted method ofplanarization. This planarization method typically requires that thesubstrate be mounted on a carrier head. The exposed surface of thesubstrate is typically placed against a rotating polishing pad. Thecarrier head provides a controllable load on the substrate to push itagainst the polishing pad. A polishing liquid, such as a slurry withabrasive particles, is typically supplied to the surface of thepolishing pad.

One problem in CMP is determining whether the polishing process iscomplete, i.e., whether a substrate layer has been planarized to adesired flatness or thickness, or when a desired amount of material hasbeen removed. Variations in the initial thickness of the substratelayer, the slurry composition, the polishing pad condition, the relativespeed between the polishing pad and the substrate, and the load on thesubstrate can cause variations in the material removal rate. Thesevariations cause variations in the time needed to reach the polishingendpoint. Therefore, it may not be possible to determine the polishingendpoint merely as a function of polishing time.

In some systems, a substrate is optically monitored in-situ duringpolishing, e.g., through a window in the polishing pad. However,existing optical monitoring techniques may not satisfy increasingdemands of semiconductor device manufacturers.

SUMMARY

In some optical monitoring processes, a spectrum measured in-situ, e.g.,during a polishing process of CMP, is compared to a library of referencespectra to find the best matching reference spectrum. However, thespectrum measured in-situ usually contains multiple noise componentsthat can distort the results, rendering inaccurate comparison to thelibrary of reference spectra. One of the most prominent noise componentsis underlayer variation that can be stacked with different materials ofdifferent indices of refraction, thickness and other spectrum relatedproperties. This problem is accentuated during back end of line (BEOL)processes, in which silicon background substrate does not provide a goodbase spectrum signal for obtaining the normalized reflectance spectra.If silicon is used for normalization, then there would be significantcopper (or other deposited conductive material) noise left in thespectrum signal. Similar problem is even more important in model basedtechniques which require correct substrate when stack is built.Therefore an improved polishing/normalization method with a differentspectrum characteristic (e.g. by using a copper background substrate) isdisclosed here to improve the measured spectra in comparison to thelibrary of reference spectra.

In one aspect a method of controlling polishing includes polishing asubstrate. The substrate includes a non-metallic layer undergoingpolishing and a metal layer underlying the non-metallic layer. A metalreference spectrum is stored. The metal reference spectrum is a spectrumof light reflected from a same metal material as the metal layer. Asequence of raw spectra of light is reflected from the substrate duringpolishing with an in-situ optical monitoring system. Each raw spectrumin the sequence of raw spectra is normalized to generate a sequence ofnormalized spectra. Normalizing includes a division operation in whichthe raw spectrum is in the numerator and the metal reference spectrum isin the denominator. At least one of a polishing endpoint or anadjustment for a polishing rate is determined based on at least onenormalized predetermined spectrum from the sequence of normalizedspectra.

Implementations may include one or more of the following features. Oneor more dark spectra may be stored. The one or more dark spectra may bespectra measured by the in-situ optical monitoring system when nosubstrate is being measured by the in-situ optical monitoring system.Normalizing may include subtracting the one or more dark spectra fromthe raw spectrum and the metal reference spectrum. Normalizing mayinclude calculating R=(A−DA)/(B−DB) where R is the normalized spectrum,A is the raw spectrum, B is the metal reference spectrum and DA and DBare dark spectra. DA and DB may be the same dark spectrum. DA and DB maybe different dark spectra. DA may be a dark spectrum collected when theraw spectrum is collected and DB may be a dark spectrum collected whenthe base layer reference spectrum is collected. DA may be a darkspectrum collected at the same platen rotation as the raw spectrum andDB may be a dark spectrum collected at the same platen rotation as thebase layer reference spectrum. The metal reference spectrum may begenerated. Generating the metal reference spectrum may include measuringa spectrum of light reflected from the metal material with the in-situoptical monitoring system. Measuring a spectrum of light reflected fromthe metal material may include polishing a blanket copper wafer.Generating the metal reference spectrum may include calculating themetal reference spectrum from an optical model. The metal layer mayconsist of copper, aluminum or tungsten. A sequence of values may begenerated from the sequence of normalized spectra, a function may be fitto the sequence of values, a projected time at which the functionreaches a target value may be determined, and at least one of apolishing endpoint or an adjustment for a polishing rate may bedetermined based on the projected time. For each normalized spectrumfrom the sequence of normalized spectra, a best matching referencespectrum may be found from a library having a plurality of referencespectra. Generating the sequence of values may include, for each bestmatching reference spectrum, determining a value associated the bestmatching reference spectrum. For each normalized spectrum from thesequence of normalized spectra, a position or width of a peak or valleyof the normalized spectrum may be found to generate a sequence ofposition or width values, and the sequence of values may be generatedfrom the sequence of position or width values. Polishing may be haltedwhen the function matches or exceeds a target value. The substrate mayinclude a plurality of zones, and a polishing rate of each zone may beindependently controllable by an independently variable polishingparameter. For each zone, a sequence of normalized spectra may begenerated and a sequence of values may be generated from the sequence ofnormalized spectra. Based on the sequence of values for each zone, thepolishing parameter for at least one zone may be adjusted to adjust thepolishing rate of the at least one zone such that the plurality of zoneshave a smaller difference in thickness at the polishing endpoint thanwithout such adjustment. Polishing the substrate may be aback-end-of-line portion of an integrated circuit fabrication process.

In another aspect, a computer program product, tangibly embodied in amachine readable storage device, includes instructions to carry out themethod.

Implementations may optionally include one or more of the followingadvantages. A raw spectrum can be normalized to remove variations from ametal underlayer, thus improving the quality of the measured spectrumused for the endpoint detection algorithm. Thus, reliability of theendpoint system to detect a desired polishing endpoint can be improved,and within-wafer and wafer-to-wafer thickness non-uniformity (WIWNU andWTWNU) can be reduced.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A-1C are schematic cross-sectional views of a substrate before,during and after polishing.

FIG. 2 illustrates a schematic cross-sectional view of an example of apolishing apparatus.

FIG. 3 illustrates a schematic top view of a substrate having multiplezones.

FIG. 4 illustrates a top view of a polishing pad and shows locationswhere in-situ measurements are taken on a substrate.

FIG. 5 illustrates a measured spectrum from the in-situ opticalmonitoring system.

FIG. 6 illustrates a library of reference spectra.

FIG. 7 illustrates an index trace.

FIG. 8 illustrates an index trace having a linear function fit to indexvalues collected after clearance of an overlying layer is detected.

FIG. 9 is a flow diagram of an example process for fabricating asubstrate and detecting a polishing endpoint.

FIG. 10 illustrates a plurality of index traces.

FIG. 11 illustrates a calculation of a plurality of desired slopes for aplurality of adjustable zones based on a time that an index trace of areference zone reaches a target index.

FIG. 12 illustrates a calculation of an endpoint for based on a timethat an index trace of a reference zone reaches a target index.

FIG. 13 is a flow diagram of an example process for adjusting thepolishing rate of a plurality of zones in a plurality of substrates suchthat the plurality of zones have approximately the same thickness at thetarget time.

FIG. 14 shows a flow chart for detecting clearance of an overlyinglayer.

FIG. 15A shows a graph of spectra collected during a single sweep at thebeginning of polishing.

FIG. 15B shows a graph of spectra collected during a single sweep nearbarrier clearing.

FIG. 16 shows a graph of standard deviation of spectra as a function ofpolishing time.

FIG. 17 is a graph showing a comparison of different techniques fordetermining a best matching reference spectrum.

FIG. 18 shows an implementation for determining an endpoint.

FIG. 19 is a graph showing normalization of a spectrum.

Like reference numbers and designations in the various drawings indicatelike elements.

DETAILED DESCRIPTION

One optical monitoring technique is to measure spectra of lightreflected from a substrate during polishing, and identify a matchingreference spectra from a library. In some implementations, the matchingreference spectra provide a series of index values, and a function,e.g., a line, is fit to the series of index values. The projection ofthe function to a target value can be used to determine endpoint or tochange a polishing rate.

One potential problem, is that the spectrum measured in-situ usuallycontains multiple noise components that can distort the results,rendering inaccurate comparison to the library of reference spectra. Oneof the most prominent noise components is underlayer variation that canbe stacked with different materials of different indices of refraction,thickness and other spectrum related properties. This problem isaccentuated during back end of line (BEOL) processes, in which siliconbackground substrate does not provide a good base spectrum signal forobtaining the normalized reflectance spectra. If silicon is used fornormalization, then there would be significant copper (or otherdeposited conductive material) noise left in the spectrum signal.Similar problem is even more important in model based techniques whichrequire correct substrate when stack is built. However, it is possibleto reduce or avoid this problem by using a copper substrate and itsreflectance spectrum to reduce noise and improve the spectra measurementaccuracy.

A substrate can include a first layer and a second layer disposed overthe second layer. The first layer can be a dielectric. Both the firstlayer and the second layer are at least semi-transparent. Together, thefirst layer and one or more additional layers (if present) provide alayer stack below the second layer.

As an example, referring to FIG. 1A, a substrate 10 can include a basestructure 12, e.g., a glass sheet or semiconductor wafer, possibilitywith further layers of conductive or insulating material. A conductivelayer 14, e.g., a metal, such as copper, tungsten or aluminum, isdisposed over the base structure 12. A patterned lower first dielectriclayer 18 is disposed over the conductive layer 14, and a patterned uppersecond dielectric layer 22 is disposed over the lower dielectric layer18. The lower dielectric layer 18 and the upper dielectric layer 22 canbe an insulator, e.g., an oxide, such as silicon dioxide, or a low-kmaterial, such as carbon doped silicon dioxide, e.g., Black Diamond™(from Applied Materials, Inc.) or Coral™ (from Novellus Systems, Inc.).The lower dielectric layer 18 and the upper dielectric layer 22 can becomposed of the same material or different materials.

Optionally disposed between the conductive layer 14 and the lowerdielectric layer 18 is a passivation layer 16, e.g., silicon nitride.Optionally disposed between the lower dielectric layer 18 and the upperdielectric layer 22 is a etch stop layer 20, e.g., a dielectricmaterial, e.g., silicon carbide, silicon nitride, or carbon-siliconnitride (SiCN). Disposed over the upper dielectric layer 22 and at leastinto the trenches in the upper dielectric layer 22 is a barrier layer 26of different composition than the lower dielectric layer 18 and theupper dielectric layer 22. For example, the barrier layer 26 can be ametal or a metal nitride, e.g., tantalum nitride or titanium nitride.Optionally disposed between the upper dielectric layer 22 and thebarrier layer 26 first layer and the second layer are one or moreadditional layers 24 of another dielectric material different from thesecond dielectric material, e.g., a low-k capping material, e.g., amaterial formed from tetraethyl orthosilicate (TEOS). Disposed over theupper dielectric layer 22 (and at least in trenches provided by thepattern of the upper dielectric layer 22) is a conductive material 28,e.g., a metal, such as copper, tungsten or aluminum.

The layers between the conductive layer 14 and the conductive material28, including the barrier layer 26, can have a sufficiently lowextinction coefficient and/or be sufficiently thin that they transmitslight from the optical monitoring system. In contrast, the conductivelayer 14 and the conductive material 28 can be sufficiently thick andhave a sufficiently high extinction coefficient to be opaque to lightfrom the optical monitoring system.

In some implementations, the upper dielectric layer 22 provides thefirst layer, and the barrier layer 26 provides the second layer,although other layers are possible for the first layer and the secondlayer.

Chemical mechanical polishing can be used to planarize the substrateuntil the second layer is exposed. For example, as shown in FIG. 1B,initially the opaque conductive material 28 is polished until anon-opaque second layer, e.g., the barrier layer 26 is exposed. Then,referring to FIG. 1C, the portion of the second layer remaining over thefirst layer is removed and the substrate is polished until the firstlayer, e.g., the upper dielectric layer 22, is exposed. In addition, itis sometimes desired to polish the first layer, e.g., the dielectriclayer 22, until a target thickness remains or a target amount ofmaterial has been removed. In the example of FIGS. 1A-1C, afterplanarization, the portions of the conductive material 28 remainingbetween the raised pattern of the upper dielectric layer 22 form viasand the like.

One method of polishing is to polish the conductive material 28 on afirst polishing pad at least until the second layer, e.g., the barrierlayer 26, is exposed. In addition, a portion of the thickness of thesecond layer can be removed, e.g., during an overpolishing step at thefirst polishing pad. The substrate is then transferred to a secondpolishing pad, where the second layer, e.g., the barrier layer 26 iscompletely removed, and a portion of the thickness of the first layer,e.g., upper dielectric layer 22, such as the low-k dielectric, is alsoremoved. In addition, if present, the additional layer or layers, e.g.,the capping layer, between the first and second layer can be removed inthe same polishing operation at the second polishing pad.

FIG. 2 illustrates an example of a polishing apparatus 100. Thepolishing apparatus 100 includes a rotatable disk-shaped platen 120 onwhich a polishing pad 110 is situated. The platen is operable to rotateabout an axis 125. For example, a motor 121 can turn a drive shaft 124to rotate the platen 120. The polishing pad 110 can be a two-layerpolishing pad with an outer polishing layer 112 and a softer backinglayer 114.

The polishing apparatus 100 can include a port 130 to dispense polishingliquid 132, such as a slurry, onto the polishing pad 110 to the pad. Thepolishing apparatus can also include a polishing pad conditioner toabrade the polishing pad 110 to maintain the polishing pad 110 in aconsistent abrasive state.

The polishing apparatus 100 includes one or more carrier heads 140. Eachcarrier head 140 is operable to hold a substrate 10 against thepolishing pad 110. Each carrier head 140 can have independent control ofthe polishing parameters, for example pressure, associated with eachrespective substrate.

In particular, each carrier head 140 can include a retaining ring 142 toretain the substrate 10 below a flexible membrane 144. Each carrier head140 also includes a plurality of independently controllablepressurizable chambers defined by the membrane, e.g., three chambers 146a-146 c, which can apply independently controllable pressurizes toassociated zones 148 a-148 c on the flexible membrane 144 and thus onthe substrate 10 (see FIG. 3). Referring to FIG. 3, the center zone 148a can be substantially circular, and the remaining zones 148 b-148 c canbe concentric annular zones around the center zone 148 a. Although onlythree chambers are illustrated in FIGS. 2 and 3 for ease ofillustration, there could be one or two chambers, or four or morechambers, e.g., five chambers.

Returning to FIG. 2, each carrier head 140 is suspended from a supportstructure 150, e.g., a carousel, and is connected by a drive shaft 152to a carrier head rotation motor 154 so that the carrier head can rotateabout an axis 155. Optionally each carrier head 140 can oscillatelaterally, e.g., on sliders on the carousel 150; or by rotationaloscillation of the carousel itself. In operation, the platen is rotatedabout its central axis 125, and each carrier head is rotated about itscentral axis 155 and translated laterally across the top surface of thepolishing pad.

While only one carrier head 140 is shown, more carrier heads can beprovided to hold additional substrates so that the surface area ofpolishing pad 110 may be used efficiently. Thus, the number of carrierhead assemblies adapted to hold substrates for a simultaneous polishingprocess can be based, at least in part, on the surface area of thepolishing pad 110.

The polishing apparatus also includes an in-situ optical monitoringsystem 160, e.g., a spectrographic monitoring system, which can be usedto determine whether to adjust a polishing rate or an adjustment for thepolishing rate as discussed below. An optical access through thepolishing pad is provided by including an aperture (i.e., a hole thatruns through the pad) or a solid window 118. The solid window 118 can besecured to the polishing pad 110, e.g., as a plug that fills an aperturein the polishing pad, e.g., is molded to or adhesively secured to thepolishing pad, although in some implementations the solid window can besupported on the platen 120 and project into an aperture in thepolishing pad.

The optical monitoring system 160 can include a light source 162, alight detector 164, and circuitry 166 for sending and receiving signalsbetween a remote controller 190, e.g., a computer, and the light source162 and light detector 164. One or more optical fibers can be used totransmit the light from the light source 162 to the optical access inthe polishing pad, and to transmit light reflected from the substrate 10to the detector 164. For example, a bifurcated optical fiber 170 can beused to transmit the light from the light source 162 to the substrate 10and back to the detector 164. The bifurcated optical fiber an include atrunk 172 positioned in proximity to the optical access, and twobranches 174 and 176 connected to the light source 162 and detector 164,respectively.

In some implementations, the top surface of the platen can include arecess 128 into which is fit an optical head 168 that holds one end ofthe trunk 172 of the bifurcated fiber. The optical head 168 can includea mechanism to adjust the vertical distance between the top of the trunk172 and the solid window 118.

The output of the circuitry 166 can be a digital electronic signal thatpasses through a rotary coupler 129, e.g., a slip ring, in the driveshaft 124 to the controller 190 for the optical monitoring system.Similarly, the light source can be turned on or off in response tocontrol commands in digital electronic signals that pass from thecontroller 190 through the rotary coupler 129 to the optical monitoringsystem 160. Alternatively, the circuitry 166 could communicate with thecontroller 190 by a wireless signal.

The light source 162 can be operable to emit white light. In oneimplementation, the white light emitted includes light havingwavelengths of 200-800 nanometers. A suitable light source is a xenonlamp or a xenon mercury lamp.

The light detector 164 can be a spectrometer. A spectrometer is anoptical instrument for measuring intensity of light over a portion ofthe electromagnetic spectrum. A suitable spectrometer is a gratingspectrometer. Typical output for a spectrometer is the intensity of thelight as a function of wavelength (or frequency).

As noted above, the light source 162 and light detector 164 can beconnected to a computing device, e.g., the controller 190, operable tocontrol their operation and receive their signals. The computing devicecan include a microprocessor situated near the polishing apparatus,e.g., a programmable computer. With respect to control, the computingdevice can, for example, synchronize activation of the light source withthe rotation of the platen 120.

In some implementations, the light source 162 and detector 164 of thein-situ monitoring system 160 are installed in and rotate with theplaten 120. In this case, the motion of the platen will cause the sensorto scan across each substrate. In particular, as the platen 120 rotates,the controller 190 can cause the light source 162 to emit a series offlashes starting just before and ending just after the optical accesspasses below the substrate 10. Alternatively, the computing device cancause the light source 162 to emit light continuously starting justbefore and ending just after each substrate 10 passes over the opticalaccess. In either case, the signal from the detector can be integratedover a sampling period to generate spectra measurements at a samplingfrequency.

In operation, the controller 190 can receive, for example, a signal thatcarries information describing a spectrum of the light received by thelight detector for a particular flash of the light source or time frameof the detector. Thus, this spectrum is a spectrum measured in-situduring polishing.

As shown by in FIG. 4, if the detector is installed in the platen, dueto the rotation of the platen (shown by arrow 204), as the window 108travels below a carrier head, the optical monitoring system makingspectra measurements at a sampling frequency will cause the spectrameasurements to be taken at locations 201 in an arc that traverses thesubstrate 10. For example, each of points 201 a-201 k represents alocation of a spectrum measurement by the monitoring system (the numberof points is illustrative; more or fewer measurements can be taken thanillustrated, depending on the sampling frequency). The samplingfrequency can be selected so that between five and twenty spectra arecollected per sweep of the window 108. For example, the sampling periodcan be between 3 and 100 milliseconds.

As shown, over one rotation of the platen, spectra are obtained fromdifferent radii on the substrate 10. That is, some spectra are obtainedfrom locations closer to the center of the substrate 10 and some arecloser to the edge. Thus, for any given scan of the optical monitoringsystem across a substrate, based on timing, motor encoder information,and optical detection of the edge of the substrate and/or retainingring, the controller 190 can calculate the radial position (relative tothe center of the substrate being scanned) for each measured spectrumfrom the scan. The polishing system can also include a rotary positionsensor, e.g., a flange attached to an edge of the platen that will passthrough a stationary optical interrupter, to provide additional data fordetermination of which substrate and the position on the substrate ofthe measured spectrum. The controller can thus associate the variousmeasured spectra with the controllable zones 148 b-148 e (see FIG. 2) onthe substrates 10 a and 10 b. In some implementations, the time ofmeasurement of the spectrum can be used as a substitute for the exactcalculation of the radial position.

Over multiple rotations of the platen, for each zone, a sequence ofspectra can be obtained over time. Without being limited to anyparticular theory, the spectrum of light reflected from the substrate 10evolves as polishing progresses (e.g., over multiple rotations of theplaten, not during a single sweep across the substrate) due to changesin the thickness of the outermost layer, thus yielding a sequence oftime-varying spectra. Moreover, particular spectra are exhibited byparticular thicknesses of the layer stack.

In some implementations, the controller, e.g., the computing device, canbe programmed to compare a measured spectrum to multiple referencespectra and to determine which reference spectrum provides the bestmatch. In particular, the controller can be programmed to compare eachspectrum from a sequence of measured spectra from each zone to multiplereference spectra to generate a sequence of best matching referencespectra for each zone.

As used herein, a reference spectrum is a predefined spectrum generatedprior to polishing of the substrate. A reference spectrum can have apre-defined association, i.e., defined prior to the polishing operation,with a value representing a time in the polishing process at which thespectrum is expected to appear, assuming that the actual polishing ratefollows an expected polishing rate. Alternatively or in addition, thereference spectrum can have a pre-defined association with a value of asubstrate property, such as a thickness of the outermost layer.

A reference spectrum can be generated empirically, e.g., by measuringthe spectra from a test substrate, e.g., a test substrate having a knowninitial layer thicknesses. For example, to generate a plurality ofreference spectra, a set-up substrate is polished using the samepolishing parameters that would be used during polishing of devicewafers while a sequence of spectra are collected. For each spectrum, avalue is recorded representing the time in the polishing process atwhich the spectrum was collected. For example, the value can be anelapsed time, or a number of platen rotations. The substrate can beoverpolished, i.e., polished past a desired thickness, so that thespectrum of the light that reflected from the substrate when the targetthickness is achieved can be obtained.

In order to associate each spectrum with a value of a substrateproperty, e.g., a thickness of the outermost layer, the initial spectraand property of a “set-up” substrate with the same pattern as theproduct substrate can be measured pre-polish at a metrology station. Thefinal spectrum and property can also be measured post-polish with thesame metrology station or a different metrology station. The propertiesfor spectra between the initial spectra and final spectra can bedetermined by interpolation, e.g., linear interpolation based on elapsedtime at which the spectra of the test substrate was measured.

In addition to being determined empirically, some or all of thereference spectra can be calculated from theory, e.g., using an opticalmodel of the substrate layers. For example, and optical model can beused to calculate a reference spectrum for a given outer layer thicknessD. A value representing the time in the polishing process at which thereference spectrum would be collected can be calculated, e.g., byassuming that the outer layer is removed at a uniform polishing rate.For example, the time Ts for a particular reference spectrum can becalculated simply by assuming a starting thickness D0 and uniformpolishing rate R (Ts=(D0−D)/R). As another example, linear interpolationbetween measurement times T1, T2 for the pre-polish and post-polishthicknesses D1, D2 (or other thicknesses measured at the metrologystation) based on the thickness D used for the optical model can beperformed (Ts=T2−T1*(D1−D)/(D1−D2)).

In some implementations, software can be used to automatically calculatemultiple reference spectra. Since there are variations in thethicknesses of the underlying layers of the incoming substrates, themanufacturer can input a thickness range and a thickness increment forat least one of the underlying layers, e.g., for multiple underlyinglayers. The software will calculate a reference spectra for eachcombination of thicknesses of the underlying layers. Multiple referencespectra can be calculated for each thickness of the overlying layer.

For example, for polishing of the structure shown in FIG. 1B, theoptical stack might include, in order, a layer of metal at the bottom,e.g., the conductive layer 14, the passivation layer, a lower low-kdielectric layer, an etch stop layer, an upper low-k dielectric layer, aTEOS layer, a barrier layer, and a layer of water (to represent thepolishing liquid through which the light will be arriving). In oneexample, for the purpose of calculating the reference spectra, thebarrier layer might range from 300 Å to 350 Å in 10 Å increments, theTEOS layer might range from 4800 Å to 5200 Å in 50 Å increments, and theupper low-k dielectric top layer might range from 1800 Å to 2200 Å in 20Å increments. A reference spectrum is calculated for each combination ofthicknesses of the layers. With these degrees of freedom, 9*6*21=1134reference spectra would be calculated. However, other ranges andincrements are possible for each layer.

To calculate the reference spectra, the following optical model can beused. The reflectance R_(STACK) of the top layer p of a thin film stackcan be calculated as

$R_{STACK} = {\frac{E_{p}^{-}}{E_{p}^{+}}}^{2}$where E_(p) ⁺ represents the electro-magnetic field strength of theincoming light beam and E_(p) ⁻ represents the electromagnetic fieldstrength of the outgoing light beam.

The values E_(p) ⁺ and E_(p) ⁻ can be calculated asE _(p) ⁺=(E _(p) +H _(p)/μ_(p))/2 E _(p) ⁻=(E _(p) −H _(p)/μ_(p))/2

The fields E and H in an arbitrary layer j can be calculated usingtransfer-matrix methods from the fields E and H in an underlying layer.Thus, in a stack of layers 0, 1, . . . , p−1, p (where layer 0 is thebottom layer and layer p is the outermost layer), for a given layer j>0,E_(j) and H_(j) can be calculated as

$\begin{bmatrix}E_{j} \\H_{j}\end{bmatrix} = {\begin{bmatrix}{\cos\; g_{j}} & {\frac{i}{u_{j}}\sin\; g_{j}} \\{i\;\mu_{j}\sin\; g_{j}} & {\cos\; g_{j}}\end{bmatrix}\begin{bmatrix}E_{j - 1} \\H_{j - 1}\end{bmatrix}}$with μ_(j)=(n_(j)−ik_(j))·cos φ_(j) and g_(j)=2π(n_(j)−ik_(j))·t_(j) cosφ_(j)/λ, where n_(j) is the index of refraction of layer j, k_(j) is anextinction coefficient of layer j, ·t_(j) is the thickness of layer j,φ_(j) is the incidence angle of the light to layer j, and λ is thewavelength. For the bottom layer in the stack, i.e., layer j=0, E₀=1 andH₀=μ₀=(n₀−ik₀)·cos φ₀. The index of refraction n and the extinctioncoefficient k for each layer can be determined from scientificliterature, and can be functions of wavelength. The incidence angle φcan be calculated from Snell's law.

The thickness t for a layer can be calculated from the thickness rangeand thickness increment input by the user for the layer, e.g.,t_(j)=T_(MINj)+k*T_(INCj) for k=0, 1, . . . , for t_(j)≦T_(MAXj), whereT_(MINj) and T_(MAXj) are the lower and upper boundaries of the range ofthicknesses for layer j and T_(INCj) is the thickness increment forlayer j. The calculation can be iterated for each combination ofthickness values of the layers.

A potential advantage of this technique is quick generation of a largenumber of reference spectra that can correspond to differentcombinations of thicknesses of layers on the substrate, thus improvinglikelihood of finding a good matching reference spectra and improvingaccuracy and reliability of the optical monitoring system.

As an example, the light intensity reflected from the substrate shown inFIG. 1C can be calculated as

$\begin{bmatrix}E_{5} \\H_{5}\end{bmatrix} = {{{\begin{bmatrix}{\cos\; g_{4}} & {\frac{i}{u_{j}}\sin\; g_{4}} \\{i\;\mu_{4}\sin\; g_{4}} & {{\cos\; g_{4}}\;}\end{bmatrix}\begin{bmatrix}{\cos\; g_{3}} & {\frac{i}{u_{j}}\sin\; g_{3}} \\{i\;\mu_{3}\sin\; g_{3}} & {\cos\; g_{3\;}}\end{bmatrix}}\begin{bmatrix}{\cos\; g_{2}} & {\frac{i}{u_{2}}\sin\; g_{2}} \\{i\;\mu_{2}\sin\; g_{2}} & {\cos\; g_{2}}\end{bmatrix}}{\quad{\begin{bmatrix}{\cos\; g_{1}} & {\frac{i}{u_{1}}\sin\; g_{1}} \\{i\;\mu_{1}\sin\; g_{1}} & {\cos\; g_{1}}\end{bmatrix}\begin{bmatrix}1 \\\mu_{0}\end{bmatrix}}}}$with values of μ₄ and μ₄ depending on the thickness, index of refractionand extinction coefficient of the outermost layer of the substrate 10,e.g., the upper dielectric layer 22, e.g., a low-k material, of g₃ andμ₃ depending on the thickness, index of refraction and extinctioncoefficient of an underlying layer, e.g., the etch stop layer 20, e.g.,SiCN, g₂ and μ₂ depending on the thickness, index of refraction andextinction coefficient of another underlying layer, e.g., the lowerdielectric layer 18, g₁ and μ₁ depending on the thickness, index ofrefraction and extinction coefficient of another underlying layer, e.g.,a passiviation layer, e.g., SiN, and μ₀ depending on the index ofrefraction and extinction coefficient of the bottom layer, e.g., theconductive layer 14, e.g., copper.

The reflectance R_(STACK) can then be calculated as

$R_{STACK} = \frac{E_{5} - \frac{H_{5}}{\mu_{5}}}{E_{5} + \frac{H_{5}}{\mu_{5}}}$

Although not shown, the presence of a layer of water over the substrate(to represent the polishing liquid through which the light will bearriving) can also be accounted for in the optical model.

The substrate and associated optical stack described above is only onepossible assembly of layers, and many others are possible. For example,the optical stack described above uses a conductive layer at the bottomof the optical stack, which would be typical for a substrate in aback-end-of-line process. However, in a front-end-of-line process, or ifthe conductive layer is a transparent material, then the bottom of theoptical stack can be the semiconductor wafer, e.g., silicon. As anotherexample, some substrates may not include the lower dielectric layer.

In addition to variations of the layer thicknesses, the optical modelcan include variations in the spectral contribution of the metal layer.That is, depending on the pattern on the die being manufactured, somespectral measurements may be made in regions with high concentration ofmetal (e.g., from metal material 28 in the trenches), whereas otherspectral measurements may be made in regions with lower concentration ofmetal.

The spectrum R_(LIBRARY) that is added to the library ban be calculatedas

$R_{LIBRARY} = {{\frac{R_{STACK}}{R_{BASELINE}}\left( {1 - X} \right)} + {X*R_{Metal}}}$where R_(BASELINE) is the spectral reflectance of the material at thebottom of the optical stack, e.g., bare semiconductor, e.g., for asubstrate in a front-end-of-line process, or bare metal, e.g., for asubstrate in a back-end-of-line process. The bare semiconductor can bethe reflectance off of bare silicon; the bare metal can be copper. X isthe percentage contribution to the spectrum of the metal, e.g., copper,and R_(Metal) is the reflectance spectrum from the metal, e.g., copper.

R_(LIBRARY) can be a combination of multiple stack models. For example,there could be an R_(STACK1) which is the spectral contribution of thetopmost stack (comprising of CAP, dielectric, barrier, and coppersubstrate), and R_(STACK2) which is the spectral contribution of the twotopmost stacks (which is the dielectric and barrier from R_(STACK1) plusthe dielectric, barrier, and copper substrate that would reside beneathit). So the calculation for R_(LIBRARY) could look something like:

$R_{LIBRARY} = {{\frac{R_{{STACK}\; 1}}{R_{BASELINE}}*(X)} + {\frac{R_{{STACK}\; 2}}{R_{BASELINE}}*(Y)} + {\left( {1 - X - Y} \right)*R_{Metal}}}$  where  X + Y < 1.

In some implementations, e.g., if the metal layer 14 and the metalmaterial 28 are the same material, e.g., copper, then R_(BASELINE) andR_(Metal) are the same spectrum, e.g., the spectrum for copper. Thecalculation of spectrum R_(LIBRARY) can be iterated over multiple valuesfor X. For example, X can vary between 0.0 and 1.0 at 0.2 intervals.Continuing the example of the stack shown in FIG. 1B, with these degreesof freedom, 9*6*21*6=6804 reference spectra would be calculated. Apotential advantage of this technique is generation of reference spectrathat can correspond to different concentrations of metal in the measuredspot on the substrate, thus improving likelihood of finding a goodmatching reference spectra and improving accuracy and reliability of theoptical monitoring system.

For some types of substrates, e.g., some layer structures and diepatterns, the techniques described above for generation of a library ofreference spectra based on an optical model can be sufficient. However,for some types of substrates, the reference spectra based on thisoptical model do not correspond to empirically measured spectra. Withoutbeing limited to any particular theory, as additional layers are addedto the stack on the substrate, scattering of light increases, e.g., fromthe different patterned metal layers on the substrate. In short, as thenumber of metal layers increases, it becomes less likely that light fromlower layers on the substrate will be reflected back to enter theoptical fiber and reach the detector.

In some implementations, to simulate the scattering caused by increasingnumbers of metal layers, a modified extinction coefficient can be usedin the optical model for calculation of the reference spectra. Themodified extinction coefficient is larger than the natural extinctioncoefficient for the material of the layer. An amount added to theextinction coefficient can be larger for layers closer to the wafer.

For example, in the equations above, the terms μ_(j) and g_(j) can bereplaced by μ′_(j) and g′_(j), respectively, with μ′_(j) and g′_(j)calculated asμ′_(j)=(n _(j) −i(k _(j) +m _(j)))·cos φ_(j) g′ _(j)=2π(n _(j) −i(k _(j)+m _(j)))·t _(j)·cos φ_(j)/λwhere m_(j) is an amount to increase the extinction coefficient of layerj. In general, m_(j) is equal to or greater than 0, and can be up to 1.For layers near the top of the stack, m_(j) can be small, e.g., 0. Fordeeper layers, m_(j) can larger, e.g., 0.2, 0.4 or 0.6. The amount m_(j)can increase monotonically as j decreases. The amount m_(j) can befunctions of wavelength, e.g., for a particular layer, m_(j) can begreater at longer wavelengths or can be greater at shorter wavelengths.

Referring to FIGS. 5 and 6, a measured spectrum 300 (see FIG. 5) can becompared to reference spectra 320 from one or more libraries 310 (seeFIG. 6). As used herein, a library of reference spectra is a collectionof reference spectra which represent substrates that share a property incommon. However, the property shared in common in a single library mayvary across multiple libraries of reference spectra. For example, twodifferent libraries can include reference spectra that representsubstrates with two different underlying thicknesses. For a givenlibrary of reference spectra, variations in the upper layer thickness,rather than other factors (such as differences in wafer pattern,underlying layer thickness, or layer composition), can be primarilyresponsible for the differences in the spectral intensities.

Reference spectra 320 for different libraries 310 can be generated bypolishing multiple “set-up” substrates with different substrateproperties (e.g., underlying layer thicknesses, or layer composition)and collecting spectra as discussed above; the spectra from one set-upsubstrate can provide a first library and the spectra from anothersubstrate with a different underlying layer thickness can provide asecond library. Alternatively or in addition, reference spectra fordifferent libraries can be calculated from theory, e.g., spectra for afirst library can be calculated using the optical model with theunderlying layer having a first thickness, and spectra for a secondlibrary can be calculated using the optical model with the underlyinglayer having a different one thickness. For example, this disclosureuses a copper substrate for generating the library and later for spectrameasurements.

In some implementations, each reference spectrum 320 is assigned anindex value 330. In general, each library 310 can include many referencespectra 320, e.g., one or more, e.g., exactly one, reference spectra foreach platen rotation over the expected polishing time of the substrate.This index 330 can be the value, e.g., a number, representing the timein the polishing process at which the reference spectrum 320 is expectedto be observed. The spectra can be indexed so that each spectrum in aparticular library has a unique index value. The indexing can beimplemented so that the index values are sequenced in an order in whichthe spectra of a test substrate were measured. An index value can beselected to change monotonically, e.g., increase or decrease, aspolishing progresses. In particular, the index values of the referencespectra can be selected so that they form a linear function of time ornumber of platen rotations (assuming that the polishing rate followsthat of the model or test substrate used to generate the referencespectra in the library). For example, the index value can beproportional, e.g., equal, to a number of platen rotations at which thereference spectra was measured for the test substrate or would appear inthe optical model. Thus, each index value can be a whole number. Theindex number can represent the expected platen rotation at which theassociated spectrum would appear.

The reference spectra and their associated index values can be stored ina reference library. For example, each reference spectrum 320 and itsassociated index value 330 can be stored in a record 340 of database350. The database 350 of reference libraries of reference spectra can beimplemented in memory of the computing device of the polishingapparatus.

As noted above, for each zone of each substrate, based on the sequenceof measured spectra or that zone and substrate, the controller 190 canbe programmed to generate a sequence of best matching spectra. A bestmatching reference spectrum can be determined by comparing a measuredspectrum to the reference spectra from a particular library.

In some implementations, the best matching reference spectrum can bedetermined by calculating, for each reference spectrum, a sum of squareddifferences between the measured spectrum and the reference spectrum.The reference spectrum with the lowest sum of squared differences hasthe best fit. Other techniques for finding a best matching referencespectrum are possible, e.g., lowest sum of absolute differences.

In some implementations, the best matching reference spectrum can bedetermined by using a matching technique other than sum of squareddifferences. In one implementation, for each reference spectrum, across-correlation between the measured spectrum and the referencespectrum is calculated, and the reference spectrum with the greatestcorrelation is selected as the matching reference spectrum. A potentialadvantage of cross-correlation is that it is less sensitive to lateralshift of a spectrum, and thus can be less sensitive to underlyingthickness variation. In order to perform the cross-correlation, theleading and trailing ends of the measured spectrum can be padded with“zeros” to provide data to compare against the reference spectrum as thereference spectrum is shifted relative to the measured spectrum.Alternatively, the leading end of the measured spectrum can be paddedwith values equal to the value at the leading edge of the measuredspectrum, and the trailing end of the measured spectrum can be paddedwith values equal to the value at the trailing edge of the measuredspectrum. Fast Fourier transforms can be used to increase the speed ofcalculation of the cross-correlation for real-time application of thematching technique.

In another implementation, a sum of enclidean vector distances, e.g.,D=1/(λa−λb)·[Σ_(λ=λa to λb)|I_(M)(λ)²−I_(R)(λ)²|], where λa to λb iswavelength summed over, calculated, I_(M)(λ) is the measured spectrum,and I_(R)(λ) is the reference spectrum. In another implementation, foreach reference spectrum, a sum of derivative differences, e.g.,D=1/(λa−λb)·[Σ_(λ=λa to λb)|dI_(M)(λ)/dλ−dI_(R)(λ)/dλ|], and thereference spectrum with the lowest sum is selected as the matchingreference spectrum.

FIG. 17 illustrates a comparison of index traces (indexes of bestmatching reference spectra as a function number of platen rotations) forspectra matching using cross-correlation and sum of squared differencesmethods for substrates with different thicknesses of the TEOS layer. Thedata was generated for product substrates having a stack of 1500 {acuteover (Å)} thick layer of Black Diamond, a 130 {acute over (Å)} thicklayer of Blok, and a TEOS layer that is 5200 {acute over (Å)}, 5100{acute over (Å)} or 5000 {acute over (Å)} thick. A reference library wasgenerated for a reference substrate having a TEOS layer that is 5200{acute over (Å)} thick. As shown by trace 1702, where the productsubstrate and the reference substrate have a TEOS layer of the samethickness, i.e., 5200 {acute over (Å)}, the two index traces overlapwith no appreciable difference. However, where product substrate has aTEOS layer that is 5100 {acute over (Å)} thick and the referencesubstrate has a TEOS layer 5200 {acute over (Å)} thick, the index trace1704 generated using sum of squared differences has some departure fromlinear behavior. In contrast, the index trace generated usingcross-correlation overlaps the index trace 1702 (and is thus not visiblein the graph). Finally, where product substrate has a TEOS layer that is5000 {acute over (Å)} thick and the reference substrate has a TEOS layer5200 {acute over (Å)} thick, the index trace 1706 generated using sum ofsquared differences has a significant departure from linear behavior andthe trace 1702, whereas the index trace 1708 generated usingcross-correlation remains generally linear and much closer to the trace1702. In sum, this shows that using cross-correlation to determine thebest matching spectrum results in a trace that better matches the idealwhen there are variations in the thickness of the underlying layer.

In some implementations, the measured raw spectra are normalized as partof the process of determining the best matching reference spectrum. Thenormalized spectrum is then compared, e.g., by calculating the sum ofsquared differences, cross-correlation, or the like, to the referencespectra to determine the best match.

For example, a base layer reference spectrum can be stored, andnormalizing can include a division operation in which the raw spectrumis in the numerator and the base layer reference spectrum is in thedenominator. The base layer reference spectrum can be a spectrum of thematerial of the bottommost layer that light would be expected to reach.For example, the base layer reference spectrum can be a metal referencespectrum, e.g., for a back-end-of-line process (since in aback-end-of-line process the bottommost layer that light would beexpected to reach would be a metal layer). For example, if the materialof the bottommost layer is copper, then the metal reference spectrum canbe a spectrum of a copper layer. As another example, the base layerreference spectrum can be a silicon reference spectrum, e.g., for afront-end-of-line process (since in a front-end-of-line process thebottommost layer that light would be expected to reach would be thesilicon wafer). To obtain the base layer reference spectrum, thespectrum of a blank wafer (no pattern) having only the exposed materialcan be measured by the in-situ optical monitoring system. For example,the metal reference spectrum can be obtained by measuring the spectrumof light reflecting of a copper disk or off a thick copper layerdeposited on a silicon wafer.

A measured spectrum can be normalized as follows:R=(A−D _(A))/(B−D _(B))where R is the normalized spectrum, A is the raw spectrum, D_(A) andD_(B) are dark spectrums obtained under the dark condition, and B is thebase layer reference spectrum. A dark spectrum is a spectrum measured bythe in-situ optical monitoring system when no substrate is beingmeasured by the in-situ optical monitoring system. In someimplementations, D_(A) and D_(B) are the same spectrum. For example,D_(A) and D_(B) could be a dark spectrum collected when the base layerreference spectrum is collected, e.g., at the same platen rotation. Insome implementations, D_(A) is a dark spectrum collected when the rawspectrum is collected, e.g., at the same platen rotation, and D_(B) is adark spectrum collected when the base layer reference spectrum iscollected, e.g., at the same platen rotation.

Normalizing the measured spectra can remove light reflectionscontributed by mediums other than the film or films of interest, and canfacilitates their comparison to the reference spectra. Light reflectionscontributed by media other than the film or films of interest includelight reflections from the polishing pad window and from the base metalor silicon layer of the substrate.

Although fairly complex layer stacks are described, this normalizationapproach would still be applicable for a much simpler substrate, e.g.,just a single layer or two layers over a metal layer, just a singlelayer or two layers over a silicon wafer, as well as layer stacks ofintermediate and greater complexity.

Now referring to FIG. 7, which illustrates the results for only a singlezone of a single substrate, the index value of each of the best matchingspectra in the sequence can be determined to generate a time-varyingsequence of index values 212. This sequence of index values can betermed an index trace 210. In some implementations, an index trace isgenerated by comparing each measured spectrum to the reference spectrafrom exactly one library. In general, the index trace 210 can includeone, e.g., exactly one, index value per sweep of the optical monitoringsystem below the substrate.

For a given index trace 210, where there are multiple spectra measuredfor a particular zone in a single sweep of the optical monitoring system(termed “current spectra”), a best match can be determined between eachof the current spectra and the reference spectra of one or more, e.g.,exactly one, library. In some implementations, each selected currentspectra is compared against each reference spectra of the selectedlibrary or libraries. Given current spectra e, f, and g, and referencespectra E, F, and G, for example, a matching coefficient could becalculated for each of the following combinations of current andreference spectra: e and E, e and F, e and G, f and E, f and F, f and G,g and E, g and F, and g and G. Whichever matching coefficient indicatesthe best match, e.g., is the smallest, determines the best-matchingreference spectrum, and thus the index value. Alternatively, in someimplementations, the current spectra can be combined, e.g., averaged,and the resulting combined spectrum is compared against the referencespectra to determine the best match, and thus the index value.

A method that can be applied to decrease computer processing is to limitthe portion of the library that is searched for matching spectra. Thelibrary typically includes a wider range of spectra than will beobtained while polishing a substrate. During substrate polishing, thelibrary searching is limited to a predetermined range of libraryspectra. In some embodiments, the current rotational index N of asubstrate being polished is determined. For example, in an initialplaten rotation, N can be determined by searching all of the referencespectra of the library. For the spectra obtained during a subsequentrotation, the library is searched within a range of freedom of N. Thatis, if during one rotation the index number is found to be N, during asubsequent rotation which is X rotations later, where the freedom is Y,the range that will be searched from (N+X)−Y to (N+X)+Y.

In some implementations, for at least some zones of some substrates, aplurality of index traces can be generated. For a given zone of a givensubstrate, an index trace can be generated for each reference library ofinterest. That is, for each reference library of interest to the givenzone of the given substrate, each measured spectrum in a sequence ofmeasured spectra is compared to reference spectra from a given library,a sequence of the best matching reference spectra is determined, and theindex values of the sequence of best matching reference spectra providethe index trace for the given library.

In summary, each index trace includes a sequence 210 of index values212, with each particular index value 212 of the sequence beinggenerated by selecting the index of the reference spectrum from a givenlibrary that is the closest fit to the measured spectrum. The time valuefor each index of the index trace 210 can be the same as the time atwhich the measured spectrum was measured.

An in-situ monitoring technique is used to detect clearing of the secondlayer and exposure of the underlying layer or layer structure. Forexample, exposure of the first layer at a time TC can be detected by asudden change in the motor torque or total intensity of light reflectedfrom the substrate, or from dispersion of the collected spectra asdiscussed in greater detail below.

As shown in FIG. 8, a function, e.g., a polynomial function of knownorder, e.g., a first-order function (e.g., a line 214) is fit to thesequence of index values of spectra collected after time TC, e.g., usingrobust line fitting. Index values for spectra collected before the timeTC are ignored when fitting the function to the sequence of indexvalues. Other functions can be used, e.g., polynomial functions ofsecond-order, but a line provides ease of computation. Polishing can behalted at an endpoint time TE that the line 214 crosses a target indexIT.

FIG. 9 shows a flow chart of a method of fabricating and polishing aproduct substrate. The product substrate can have at least the samelayer structure and the same pattern, as the test substrates used togenerate the reference spectra of the library.

Initially, the first layer is deposited on the substrate and patterned(step 902). As noted above, the first layer can be a dielectric, e.g., alow-k material, e.g., carbon doped silicon dioxide, e.g., Black Diamond™(from Applied Materials, Inc.) or Coral™ (from Novellus Systems, Inc.).Alternatively, the a first layer can include polysilicon, e.g., consistof substantially pure polysilicon, or be a combination of polysiliconand dielectric material.

Optionally, depending on the composition of the first material, one ormore additional layers of another dielectric material, different fromboth the first material, e.g., a low-k capping material, e.g.,tetraethyl orthosilicate (TEOS), is deposited over the first layer onthe product substrate (step 903). Together, the first layer and the oneor more additional layers provide a layer stack. Optionally, patterningcan occur after depositing of the one or more additional layers (so thatthe one or more additional layers do not extend into the trench in thefirst layer, as shown in FIG. 1A).

Next, the second layer of a different material, e.g., a barrier layer,e.g., a nitride, e.g., tantalum nitride or titanium nitride, isdeposited over the first layer or layer stack of the product substrate(step 904). In addition, a conductive layer, e.g., a metal layer, e.g.,copper, can be deposited over the second layer of the product substrate(and in trenches provided by the pattern of the first layer) (step 906).Optionally, patterning of the first layer can occur after depositing ofthe second layer (in which case the second layer would not extend intothe trench in the first layer).

The product substrate is polished (step 908). For example, theconductive layer and a portion of the second layer can be polished andremoved at a first polishing station using a first polishing pad (step908 a). Then the second layer and a portion of the first layer can bepolished and removed at a second polishing station using a secondpolishing pad (step 908 b). However, it should be noted that for someimplementations, there is no conductive layer, e.g., the second layer isthe outermost layer when polishing begins. Of course, steps 902-906 canbe performed elsewhere, so that the process for a particular operator ofthe polishing apparatus begins with step 908.

An in-situ monitoring technique is used to detect clearing of the secondlayer and exposure of the first layer (step 910). For example, exposureof the first layer at a time TC (see FIG. 8) can be detected by a suddenchange in the motor torque or total intensity of light reflected fromthe substrate, or from dispersion of the collected spectra as discussedin greater detail below.

In some implementations, there is no overlying layer to be removed,i.e., polishing begins with the first layer, in which case steps 903-910can be omitted, and steps that begin with the clearance of the secondlayer can instead begin immediately upon or with a few second delayafter commencing polishing of the first layer.

Beginning at least with detection of the clearance of second layer (andpotentially earlier, e.g., from the beginning of polishing of theproduct substrate with the second polishing pad), a sequence of measuredspectra are obtained during polishing (step 912), e.g., using thein-situ monitoring system described above.

The measured spectra are analyzed to generate a sequence of indexvalues, and a function is fit to the sequence of index values. Inparticular, for each measured spectrum in the sequence of measuredspectra, the index value for the reference spectrum that is the best fitis determined to generate the sequence of index values (step 914).Optionally, the measured spectra can be normalized, as discussed above,e.g., as part of the process of determining the best matching fittingreference spectrum (step 913). A function, e.g., a linear function, isfit to the sequence of index values for the spectra collected after thetime TC at which clearance of the second layer is detected (step 916).Index values for spectra collected before the time TC at which clearanceof the second layer is detected need not be used in the calculation ofthe function.

Polishing can be halted once the index value (e.g., a calculated indexvalue generated from the linear function fit to the new sequence ofindex values) reaches target index (step 918). The target thickness ITcan be set by the user prior to the polishing operation and stored.Alternatively, a target amount to remove can be set by the user, and atarget index IT can be calculated from the target amount to remove. Forexample, an index difference ID can be calculated from the target amountto remove, e.g., from an empirically determined ratio of amount removedto the index (e.g., the polishing rate), and adding the index differenceID to the index value IC at the time TC that clearance of the overlyinglayer is detected (see FIG. 8).

It is also possible to use the function fit to the index values fromspectra collected after clearance of the second layer is detected toadjust the polishing parameters, e.g., to adjust the polishing rate ofone or more zones on a substrate to improve polishing uniformity.

Referring to FIG. 10, a plurality of index traces is illustrated. Asdiscussed above, an index trace can be generated for each zone. Forexample, a first sequence 210 of index values 212 (shown by hollowcircles) can be generated for a first zone, a second sequence 220 ofindex values 222 (shown by hollow squares) can be generated for a secondzone, and a third sequence 230 of index values 232 (shown by hollowtriangles) can be generated for a third zone. Although three zones areshown, there could be two zones or four or more zones. All of the zonescan be on the same substrate, or some of the zones can be from differentsubstrates being polished simultaneously on the same platen.

As discussed above, an in-situ monitoring technique is used to detectclearing of the second layer and exposure of the underlying layer orlayer structure. For example, exposure of the first layer at a time TCcan be detected by a sudden change in the motor torque or totalintensity of light reflected from the substrate, or from dispersion ofthe collected spectra as discussed in greater detail below.

For each substrate index trace, a polynomial function of known order,e.g., a first-order function (e.g., a line) is fit to the sequence ofindex values of spectra collected after time TC for the associated zone,e.g., using robust line fitting. For example, a first line 214 can befit to index values 212 for the first zone, a second line 224 can be fitto the index values 222 of the second zone, and a third line 234 can befit to the index values 232 of the third zone. Fitting of a line to theindex values can include calculation of the slope S of the line and anx-axis intersection time T at which the line crosses a starting indexvalue, e.g., 0. The function can be expressed in the form I(t)=S·(t−T),where t is time. The x-axis intersection time T can have a negativevalue, indicating that the starting thickness of the substrate layer isless than expected. Thus, the first line 214 can have a first slope S1and a first x-axis intersection time T1, the second line 224 can have asecond slope S2 and a second x-axis intersection time T2, and the thirdline 234 can have a third slope S3 and a third x-axis intersection timeT3.

At some time during the polishing process, e.g., at a time T0, apolishing parameter for at least one zone is adjusted to adjust thepolishing rate of the zone of the substrate such that at a polishingendpoint time, the plurality of zones are closer to their targetthickness than without such adjustment. In some embodiments, each zonecan have approximately the same thickness at the endpoint time.

Referring to FIG. 11, in some implementations, one zone is selected as areference zone, and a projected endpoint time TE at which the referencezone will reach a target index IT is determined. For example, as shownin FIG. 11, the first zone is selected as the reference zone, although adifferent zone and/or a different substrate could be selected. Thetarget thickness IT is set by the user prior to the polishing operationand stored. Alternatively, a target amount to remove TR can be set bythe user, and a target index IT can be calculated from the target amountto remove TR. For example, an index difference ID can be calculated fromthe target amount to remove, e.g., from an empirically determined ratioof amount removed to the index (e.g., the polishing rate), and addingthe index difference ID to the index value IC at the time TC thatclearance of the overlying layer is detected.

In order to determine the projected time at which the reference zonewill reach the target index, the intersection of the line of thereference zone, e.g., line 214, with the target index, IT, can becalculated. Assuming that the polishing rate does not deviate from theexpected polishing rate through the remainder polishing process, thenthe sequence of index values should retain a substantially linearprogression. Thus, the expected endpoint time TE can be calculated as asimple linear interpolation of the line to the target index IT, e.g.,IT=S·(TE−T). Thus, in the example of FIG. 11 in which the first zone isselected as the reference zone, with associated first line 214,IT=S1·(TE−T1), i.e., TE=IT/S1−T1.

One or more zones, e.g., all zones, other than the reference zone(including zones on other substrates) can be defined as adjustablezones. Where the lines for the adjustable zones meet the expectedendpoint time TE define projected endpoint for the adjustable zones. Thelinear function of each adjustable zone, e.g., lines 224 and 234 in FIG.11, can thus be used to extrapolate the index, e.g., EI2 and EI3, thatwill be achieved at the expected endpoint time ET for the associatedzone. For example, the second line 224 can be used to extrapolate theexpected index, EI2, at the expected endpoint time ET for the secondzone, and the third line 234 can be used to extrapolate the expectedindex, EI3, at the expected endpoint time ET for the third zone.

As shown in FIG. 11, if no adjustments are made to the polishing rate ofany of the zones after time T0, then if endpoint is forced at the sametime for all zones, then each zone can have a different thickness (whichis not desirable because it can lead to defects and loss of throughput).

If the target index will be reached at different times for differentzones (or equivalently, the adjustable zones will have differentexpected indexes at the projected endpoint time of the reference zone),the polishing rate can be adjusted upwardly or downwardly, such that thezones would reach the target index (and thus target thickness) closer tothe same time than without such adjustment, e.g., at approximately thesame time, or would have closer to the same index value (and thus samethickness), at the target time than without such adjustment, e.g.,approximately the same index value (and thus approximately the samethickness).

Thus, in the example of FIG. 11, commencing at a time T0, at least onepolishing parameter for the second zone is modified so that thepolishing rate of the zone is increased (and as a result the slope ofthe index trace 220 is increased). Also, in this example, at least onepolishing parameter for the third zone is modified so that the polishingrate of the third zone is decreased (and as a result the slope of theindex trace 230 is decreased). As a result the zones would reach thetarget index (and thus the target thickness) at approximately the sametime (or if pressure to the zones halts at the same time, the zones willend with approximately the same thickness).

In some implementations, if the projected index at the expected endpointtime ET indicate that a zone of the substrate is within a predefinedrange of the target thickness, then no adjustment may be required forthat zone. The range may be 2%, e.g., within 1%, of the target index.

The polishing rates for the adjustable zones can be adjusted so that allof the zones are closer to the target index at the expected endpointtime than without such adjustment. For example, a reference zone of thereference substrate might be chosen and the processing parameters forall of the other zone adjusted such that all of the zones will endpointat approximately the projected time of the reference substrate. Thereference zone can be, for example, a predetermined zone, e.g., thecenter zone 148 a or the zone 148 b immediately surrounding the centerzone, the zone having the earliest or latest projected endpoint time ofany of the zones of any of the substrates, or the zone of a substratehaving the desired projected endpoint. The earliest time is equivalentto the thinnest substrate if polishing is halted at the same time.Likewise, the latest time is equivalent to the thickest substrate ifpolishing is halted at the same time. The reference substrate can be,for example, a predetermined substrate, a substrate having the zone withthe earliest or latest projected endpoint time of the substrates. Theearliest time is equivalent to the thinnest zone if polishing is haltedat the same time. Likewise, the latest time is equivalent to thethickest zone if polishing is halted at the same time.

For each of the adjustable zones, a desired slope for the index tracecan be calculated such that the adjustable zone reaches the target indexat the same time as the reference zone. For example, the desired slopeSD can be calculated from (IT−I)=SD*(TE−T0), where I is the index value(calculated from the linear function fit to the sequence of indexvalues) at time T0 polishing parameter is to be changed, IT is thetarget index, and TE is the calculated expected endpoint time. In theexample of FIG. 11, for the second zone the desired slope SD2 can becalculated from (IT−I2)=SD2*(TE−T0), and for the third zone the desiredslope SD3 can be calculated from (IT−I3)=SD3*(TE−T0).

Alternatively, in some implementations, there is no reference zone, andthe expected endpoint time can be a predetermined time, e.g., set by theuser prior to the polishing process, or can be calculated from anaverage or other combination of the expected endpoint times of two ormore zones (as calculated by projecting the lines for various zones tothe target index) from one or more substrates. In this implementation,the desired slopes are calculated substantially as discussed above,although the desired slope for the first zone of the first substratemust also be calculated, e.g., the desired slope SD1 can be calculatedfrom (IT−I1)=SD1*(TE′−T0).

Alternatively, in some implementations, there are different targetindexes for different zones. This permits the creation of a deliberatebut controllable non-uniform thickness profile on the substrate. Thetarget indexes can be entered by user, e.g., using an input device onthe controller. For example, the first zone of the first substrate canhave a first target index, the second zone of the first substrate canhave a second target index, the first zone of the second substrate canhave a third target index, and the second zone of the second substratecan have a fourth target index.

For any of the above methods described above, the polishing rate isadjusted to bring the slope of index trace closer to the desired slope.The polishing rates can be adjusted by, for example, increasing ordecreasing the pressure in a corresponding chamber of a carrier head.The change in polishing rate can be assumed to be directly proportionalto the change in pressure, e.g., a simple Prestonian model. For example,for each zone of each substrate, where zone was polished with a pressurePold prior to the time T0, a new pressure Pnew to apply after time T0can be calculated as Pnew=Pold*(SD/S), where S is the slope of the lineprior to time T0 and SD is the desired slope.

For example, assuming that pressure Pold1 was applied to the first zoneof the first substrate, pressure Pold2 was applied to the second zone ofthe first substrate, pressure Pold3 was applied to the first zone of thesecond substrate, and pressure Pold4 was applied to the second zone ofthe second substrate, then new pressure Pnew1 for the first zone of thefirst substrate can be calculated as Pnew1=Pold1*(SD1/S1), the newpressure Pnew2 for the second zone of the first substrate can becalculated as Pnew2=Pold2*(SD2/S2), the new pressure Pnew3 for the firstzone of the second substrate can be calculated as Pnew3=Pold3*(SD3/S3),and the new pressure Pnew4 for the second zone of the second substratecan be calculated as Pnew4=Pold4*(SD4/S4).

The process of determining projected times that the substrates willreach the target thickness, and adjusting the polishing rates, can beperformed just once during the polishing process, e.g., at a specifiedtime, e.g., 40 to 60% through the expected polishing time, or performedmultiple times during the polishing process, e.g., every thirty to sixtyseconds. At a subsequent time during the polishing process, the ratescan again be adjusted, if appropriate. During the polishing process,changes in the polishing rates can be made only a few times, such asfour, three, two or only one time. The adjustment can be made near thebeginning, at the middle or toward the end of the polishing process.

Polishing continues after the polishing rates have been adjusted, e.g.,after time T0, the optical monitoring system continues to collectspectra for at least the reference zone and determine index values forthe reference zone. In some implementations, the optical monitoringsystem continues to collect spectra and determine index values for eachzone. Once the index trace of a reference zone reaches the target index,endpoint is called and the polishing operation stops.

For example, as shown in FIG. 12, after time T0, the optical monitoringsystem continues to collect spectra for the reference zone and determineindex values 312 for the reference zone. If the pressure on thereference zone did not change (e.g., as in the implementation of FIG.11), then the linear function can be calculated using data points fromboth before T0 (but not before TC) and after T0 to provide an updatedlinear function 314, and the time at which the linear function 314reaches the target index IT indicates the polishing endpoint time. Onthe other hand, if the pressure on the reference zone changed at timeT0, then a new linear function 314 with a slope S′ can be calculatedfrom the sequence of index values 312 after time T0, and the time atwhich the new linear function 314 reaches the target index IT indicatesthe polishing endpoint time. The reference zone used for determiningendpoint can be the same reference zone used as described above tocalculate the expected endpoint time, or a different zone (or if all ofthe zones were adjusted as described with reference to FIG. 11, then areference zone can be selected for the purpose of endpointdetermination). If the new linear function 314 reaches the target indexIT slightly later (as shown in FIG. 12) or earlier than the projectedtime calculated from the original linear function 214, then one or moreof the zones may be slightly overpolished or underpolished,respectively. However, since the difference between the expectedendpoint time and the actual polishing time should be less than a coupleseconds, this need not severely impact the polishing uniformity.

In some implementations, e.g., for copper polishing, after detection ofthe endpoint for a substrate, the substrate is immediately subjected toan overpolishing process, e.g., to remove copper residue. Theoverpolishing process can be at a uniform pressure for all zones of thesubstrate, e.g., 1 to 1.5 psi. The overpolishing process can have apreset duration, e.g., 10 to 15 seconds.

Where multiple index traces are generated for a particular zone, e.g.,one index trace for each library of interest to the particular zone,then one of the index traces can be selected for use in the endpoint orpressure control algorithm for the particular zone. For example, theeach index trace generated for the same zone, the controller 190 can fita linear function to the index values of that index trace, and determinea goodness of fit of that linear function to the sequence of indexvalues. The index trace generated having the line with the best goodnessof fit its own index values can be selected as the index trace for theparticular zone and substrate. For example, when determining how toadjust the polishing rates of the adjustable zones, e.g., at time T0,the linear function with the best goodness of fit can be used in thecalculation. As another example, endpoint can be called when thecalculated index (as calculated from the linear function fit to thesequence of index values) for the line with the best goodness of fitmatches or exceeds the target index. Also, rather than calculating anindex value from the linear function, the index values themselves couldbe compared to the target index to determine the endpoint.

Determining whether an index trace associated with a spectra library hasthe best goodness of fit to the linear function associated with thelibrary can include determining whether the index trace of theassociated spectra library has the least amount of difference from theassociated robust line, relatively, as compared to the differences fromthe associated robust line and index trace associated with anotherlibrary, e.g., the lowest standard deviation, the greatest correlation,or other measure of variance. In one implementation, the goodness of fitis determined by calculating a sum of squared differences between theindex data points and the linear function; the library with the lowestsum of squared differences has the best fit.

Referring to FIG. 13, a summary flow chart 1300 is illustrated. Aplurality of zones of a substrate are polished in a polishing apparatussimultaneously with the same polishing pad (step 1302) as describedabove. During this polishing operation, each zone has its polishing ratecontrollable independently of the other substrates by an independentlyvariable polishing parameter, e.g., the pressure applied by the chamberin carrier head above the particular zone. During the polishingoperation, the substrate is monitored (step 1304) as described above,e.g., with a sequence of measure spectra obtained from each zone. Foreach measured spectrum in the sequence, the reference spectrum that isthe best match is determined (step 1306). The index value for eachreference spectrum that is the best fit is determined to generatesequence of index values (step 1308).

Clearance of the second layer is detected (step 1310). For each zone, alinear function is fit to the sequence of index values for spectracollected after clearance of the second layer is detected (step 1302).In one implementation, an expected endpoint time that the linearfunction for a reference zone will reach a target index value isdetermined, e.g., by linear interpolation of the linear function (step1314). In other implementations, the expected endpoint time ispredetermined or calculated as a combination of expected endpoint timesof multiple zones. If needed, the polishing parameters for the otherzones are adjusted to adjust the polishing rate of that substrate suchthat the plurality of zones reach the target thickness at approximatelythe same time or such that the plurality of zones have approximately thesame thickness (or a target thickness) at the target time (step 1316).Polishing continues after the parameters are adjusted, and for eachzone, measuring a spectrum, determining the best matching referencespectrum from a library, determining the index value for the bestmatching spectrum to generate a new sequence of index values for thetime period after the polishing parameter has been adjusted, and fittinga linear function to index values (step 1318). Polishing can be haltedonce the index value for a reference zone (e.g., a calculated indexvalue generated from the linear function fit to the new sequence ofindex values) reaches target index (step 1330).

In some implementations, the sequence of index values is used to adjustthe polishing rate of one or more zones of a substrate, but anotherin-situ monitoring system or technique is used to detect the polishingendpoint.

As discussed above, for some techniques and some layer stacks, detectionof clearance of the overlying layer and exposure of the underlying layercan be difficult. In some implementations, a sequence of groups ofspectra are collected, and a value of a dispersion parameter iscalculated for a each group of spectra to generate sequence ofdispersion values. The clearance of the overlying layer can be detectedfrom the sequence of dispersion values. This technique can be used todetect clearing of the second layer and exposure of the first layer,e.g., in steps 910 or 1310 of the polishing operations described above.

FIG. 14 shows a method 1400 for detecting clearance of the second layerand exposure of the first layer. As the substrate is being polished(step 1402), a sequence of groups of spectra are collected (step 1404).As shown in FIG. 4, if the optical monitoring system is secured to arotating platen, then in a single sweep of the optical monitoring systemacross the substrate, spectra can be collected from multiple differentlocations 201 b-201 j on the substrate. The spectra collected from asingle sweep provide a group of spectra. As polishing progresses,multiple sweeps of the optical monitoring system provide a sequence ofgroups of spectra. One group of spectra can be collected for each platenrotation, e.g., the groups can be collected at frequency equal to theplaten rotation rate. Typically, each group will include five to twentyspectra. The spectra can be collected using the same optical monitoringsystem that is used to collect spectra for the peak tracking techniquediscussed above.

FIG. 15A provides an example of a group of measured spectra 1500 a oflight reflected from the substrate 10 at the beginning of polishing,e.g., when a significant thickness of the overlying layer remains overthe underlying layer. The group of spectra 1500 a can include spectra202 a-204 a collected at different locations on the substrate in a firstsweep of the optical monitoring system across the substrate. FIG. 15Bprovides an example of a group of measured spectra 1500 b of lightreflected from the substrate 10 at or near clearance of the overlyinglayer. The group of spectra 1500 b can include spectra 202 b-204 bcollected at different locations on the substrate in a different secondsweep of the optical monitoring system across the substrate (the spectra1500 a can be collected from different locations on the substrate thanthe spectra 1500 b).

Initially, as shown in FIG. 15A, the spectra 1500 a are fairly similar.However, as shown in FIG. 15B, as the overlying layer, e.g., a barrierlayer, is cleared, and the underlying layer, e.g., a low-k or cappinglayer, is exposed, differences between the spectra 1500 b from differentlocations on the substrate tend to become more pronounced.

For each group of spectra, a value of a dispersion parameter of thespectra in the group is calculated (step 1406). This generates asequence of dispersion values.

In one implementation, to calculate a dispersion parameter for a groupof spectra, the intensity values (as a function of wavelength) areaveraged together to provide an average spectrum. That isI_(AVE)(λ)=(1/N)·[Σ_(i=1 to N) I_(i)(λ)], where N is the number ofspectra in the group and I_(i)(λ) are the spectra. For each spectrum inthe group, a total difference between the spectrum and the averagespectrum can then be calculated, e.g., using a sum of squares differenceor sum of absolute values difference, e.g.,D_(i)=[1/(λa−λb)·[Σ_(λ=λa to λb) [I_(i)(λ)−I_(AVE)(λ)]²]]^(1/2) orD_(i)=[1/(λa−λb)·[Σ_(λ=λa to λb)|I_(i)(λ)−I_(AVE)(λ)|]], where λa to λbis the wavelength range being summed over.

Once a difference value has been calculated for each spectrum in thegroup of spectra, the value of the dispersion parameter can becalculated for the group from the difference values. A variety ofdispersion parameters are possible, such as standard deviation,interquartile range, range (maximum value minus minimum value), meandifference, median absolute deviation and average absolute deviation.The sequence of dispersion values can be analyzed and used to detectclearance of the overlying layer (step 1408).

FIG. 16 shows a graph 1600 of the standard deviation of the spectra as afunction of polishing time (with each standard deviation calculated fromthe difference values of a group of spectra). Thus, each plotted point1602 in the graph is a standard deviation for the difference values ofthe group of spectra collected at a given sweep of the opticalmonitoring system. As illustrated, the standard deviation values remainfairly low during a first time period 1610. However, after time period1610, the standard deviation values become larger and more disperse.Without being limited to any particular theory, a thick barrier layermay tend to dominate the reflected spectrum, masking differences inthickness of the barrier layer itself and any underlying layer. Aspolishing progresses, the barrier layer becomes thinner or is completelyremoved, and the reflected spectrum becomes more sensitive to variationsin the underlying layer thickness. As a result, the dispersion of thespectra will tend to increase as the barrier layer is cleared.

A variety of algorithms can be used to detect the change in behavior ofthe dispersion values when the overlying layer is clearing. For example,the sequence of dispersion values can be compared to a threshold, and ifa dispersion value exceeds the threshold, then a signal is generatedindicating that the overlying layer has cleared. As another example, aslope of a portion of the sequence of dispersion values within a movingwindow can be calculated, and if the slope exceeds a threshold valuethen a signal is generated indicating that the overlying layer hascleared.

As part of the algorithm to detect the increase in dispersion, thesequence of dispersion values can be subject to a filter, e.g., alow-pass or band filter, in order to remove high frequency noise.Examples of low-pass filters include moving average and Butterworthfilters.

Although the discussion above focuses on detection of clearance of abarrier layer, the technique can be used detection clearance of anoverlying layer in other contexts, e.g., clearance of an overlying layerin another type semiconductor process that uses dielectric layer stacks,e.g., interlayer dielectric (ILD), or clearance of a thin metal layerover a dielectric layer.

In addition to use as trigger for initiating feature tracking asdiscussed above, this technique for detecting clearance of an overlyinglayer can be used for other purposes in a polishing operation, e.g., tobe used as the endpoint signal itself, to trigger a timer so that theunderlying layer is polished for a predetermined duration followingexposure, or as a trigger to modify polishing parameter, e.g., to changecarrier head pressure or slurry composition upon exposure of theunderlying layer.

FIG. 18 shows another implementation for determining an endpoint duringa polishing step. For each platen revolution, the following steps areperformed. One or more spectra of white light reflecting off a substratesurface being polished are measured (step 1102).

Each measured raw spectra is normalized (step 1104). Normalizing canremove light reflections contributed by mediums other than the film orfilms of interest. As discussed above, normalizing can include adivision operation in which the raw spectrum is in the numerator and abase layer reference spectrum is in the denominator. In particular, ameasured raw spectrum can be normalized as follows:R=(A−D _(A))/(B−D _(B))where R is the normalized spectrum, A is the raw spectrum, D_(A) andD_(B) are dark spectrums obtained under the dark condition, and B is thebase layer reference spectrum. As discussed above, D_(A) and D_(B) canbe the same spectrum, or D_(A) and D_(B) can be different spectra, e.g.,D_(A) is a dark spectrum collected when the raw spectrum is collected,e.g., at the same platen rotation, and D_(B) is a dark spectrumcollected when the base layer reference spectrum is collected, e.g., atthe same platen rotation.

For each normalized spectrum, a difference value between the normalizedspectrum and a reference spectrum is calculated, thus generating asequence of difference values (step 1114). The difference is calculatedusing one of the above-described approaches, e.g., sum of squaredifferences.

The sequence of difference values can be considered to provide adifference trace. The difference trace exhibits calculated differencesbetween normalized averages and the reference spectrum as a function oftime (or platen revolution).

A median and low-pass filter can be applied to the updated differencetrace (step 1118). Application of these filters typically smoothes thetrace (by reducing or eliminating spikes in the trace). A Savitzky-Golayfilter can also be applied to smooth the trace.

Endpoint determination is performed based on the updated and filtereddifference trace (step 1120). For example, polishing can be halted whenthe difference trace reaches a minimum, or when the difference tracefalls below a threshold value.

Optionally, for either of the processes of FIG. 9 or FIG. 18, themeasured spectra can be sorted based on the region of the pattern thathas generated the spectrum, and spectra from some regions can beexcluded from the endpoint calculation. In particular, spectra that arefrom light reflecting off scribe lines can be removed from consideration(e.g., step 1106). Different regions of a pattern substrate usuallyyield different spectra (even when the spectra were obtained at a samepoint of time during polishing). For example, a spectrum of the lightreflecting off a scribe line in a substrate is different from thespectrum of the light reflecting off an array of the substrate. Becauseof their different shapes, use of spectra from both regions of thepattern usually introduces error into the endpoint determination.However, the spectra can be sorted based on their shapes into a groupfor scribe lines and a group for arrays. Because there is often greatervariation in the spectra for scribe lines, usually these spectra can beexcluded from consideration to enhance precision.

Optionally, for either of the processes of FIG. 9 or FIG. 18, ifmultiple spectra are measured in a single sweep of the sensor across thesubstrate, a subset of the spectra can be selected and averaged (e.g.,step 1108). The subset consists of the spectra obtained from lightreflecting off the substrate at points of a region on the substrate.

Optionally, for either of the processes of FIG. 9 or FIG. 18, ahigh-pass filter can be applied to the measured spectra, e.g., before orafter normalization (e.g., step 1110). Application of the high passfilter can removes low frequency distortion of the average of the subsetof spectra. The high-pass filter can be applied to the raw spectra,their average, or to both the raw spectra and their average.

The average is normalized so that its amplitude is the same or similarto the amplitude of the reference spectrum (step 1112). The amplitude ofa spectrum is the peak-to-trough value of the spectrum. Alternatively,the average is normalized so that its reference spectrum is the same orsimilar to a reference amplitude to which the reference spectrum hasalso been normalized.

FIG. 19 illustrates the normalization of step 1112. As it can be seen,only a portion of a spectrum (or an average of spectra) is consideredfor normalization. The portion considered is referred to in the instantspecification as a normalization range and, furthermore, can be userselectable. Normalization is effected so that the highest point and thelowest point in the normalization range are normalized to 1 and 0,respectively. The normalization is calculated as follows:g=(1−0)/(r _(max) −r _(min))h=1−r _(max) *gN=R*g+hwhere, g is a gain, h is an offset, r_(max) is the highest value in thenormalization range, r_(min) is the lowest value in the normalizationrange, N is the normalized spectrum, and R is the pre normalizedspectrum.

Although the discussion above assumes a rotating platen with an opticalendpoint monitor installed in the platen, system could be applicable toother types of relative motion between the monitoring system and thesubstrate. For example, in some implementations, e.g., orbital motion,the light source traverses different positions on the substrate, butdoes not cross the edge of the substrate. In such cases, the collectedspectra can still be grouped, e.g., spectra can be collected at acertain frequency and spectra collected within a time period can beconsidered part of a group. The time period should be sufficiently longthat five to twenty spectra are collected for each group.

As used in the instant specification, the term substrate can include,for example, a product substrate (e.g., which includes multiple memoryor processor dies), a test substrate, a bare substrate, and a gatingsubstrate. The substrate can be at various stages of integrated circuitfabrication, e.g., the substrate can be a bare wafer, or it can includeone or more deposited and/or patterned layers. The term substrate caninclude circular disks and rectangular sheets.

Embodiments of the invention and all of the functional operationsdescribed in this specification can be implemented in digital electroniccircuitry, or in computer software, firmware, or hardware, including thestructural means disclosed in this specification and structuralequivalents thereof, or in combinations of them. Embodiments of theinvention can be implemented as one or more computer program products,i.e., one or more computer programs tangibly embodied in a machinereadable storage media, for execution by, or to control the operationof, data processing apparatus, e.g., a programmable processor, acomputer, or multiple processors or computers. A computer program (alsoknown as a program, software, software application, or code) can bewritten in any form of programming language, including compiled orinterpreted languages, and it can be deployed in any form, including asa stand alone program or as a module, component, subroutine, or otherunit suitable for use in a computing environment. A computer programdoes not necessarily correspond to a file. A program can be stored in aportion of a file that holds other programs or data, in a single filededicated to the program in question, or in multiple coordinated files(e.g., files that store one or more modules, sub programs, or portionsof code). A computer program can be deployed to be executed on onecomputer or on multiple computers at one site or distributed acrossmultiple sites and interconnected by a communication network. Theprocesses and logic flows described in this specification can beperformed by one or more programmable processors executing one or morecomputer programs to perform functions by operating on input data andgenerating output. The processes and logic flows can also be performedby, and apparatus can also be implemented as, special purpose logiccircuitry, e.g., an FPGA (field programmable gate array) or an ASIC(application specific integrated circuit).

The above described polishing apparatus and methods can be applied in avariety of polishing systems. Either the polishing pad, or the carrierheads, or both can move to provide relative motion between the polishingsurface and the substrate. For example, the platen may orbit rather thanrotate. The polishing pad can be a circular (or some other shape) padsecured to the platen. Some aspects of the endpoint detection system maybe applicable to linear polishing systems, e.g., where the polishing padis a continuous or a reel-to-reel belt that moves linearly. Thepolishing layer can be a standard (for example, polyurethane with orwithout fillers) polishing material, a soft material, or afixed-abrasive material. Terms of relative positioning are used; itshould be understood that the polishing surface and substrate can beheld in a vertical orientation or some other orientation.

Particular embodiments of the invention have been described. Otherembodiments are within the scope of the following claims.

What is claimed is:
 1. A method of controlling polishing, comprising:polishing a substrate, the substrate including a non-metallic layerundergoing polishing and a metal layer underlying the non-metalliclayer; storing a metal reference spectrum, the metal reference spectrumbeing a spectrum of light reflected from a same metal material as themetal layer; measuring a sequence of raw spectra of light reflected fromthe substrate during polishing with an in-situ optical monitoringsystem; normalizing each raw spectrum in the sequence of raw spectra togenerate a sequence of normalized spectra, wherein normalizing includesa division operation in which the raw spectrum is in the numerator andthe metal reference spectrum is in the denominator; and determining atleast one of a polishing endpoint or an adjustment for a polishing ratefor the substrate based on at least one normalized spectrum from thesequence of normalized spectra.
 2. The method of claim 1, furthercomprising storing one or more dark spectra, the one or more darkspectra being measured by the in-situ optical monitoring system when nosubstrate is being measured by the in-situ optical monitoring system. 3.The method of claim 2, wherein normalizing includes subtracting the oneor more dark spectra from the raw spectrum and the metal referencespectrum.
 4. The method of claim 3, wherein normalizing comprisescalculating $R = \frac{A - D_{A}}{B - D_{B}}$ where R is the normalizedspectrum, A is the raw spectrum, B is the metal reference spectrum andD_(A) and D_(B) are dark spectra.
 5. The method of claim 4, whereinD_(A) and D_(B) are the same dark spectrum.
 6. The method of claim 4,wherein D_(A) and D_(B) are different dark spectra.
 7. The method ofclaim 6, wherein D_(A) is a dark spectrum collected when the rawspectrum is collected and D_(B) is a dark spectrum collected when thebase layer reference spectrum is collected.
 8. The method of claim 7,wherein D_(A) is a dark spectrum collected at the same platen rotationas the raw spectrum and D_(B) is a dark spectrum collected at the sameplaten rotation as the base layer reference spectrum.
 9. The method ofclaim 1, further comprising generating the metal reference spectrum. 10.The method of claim 9, wherein generating the metal reference spectrumincludes measuring a spectrum of light reflected from the metal materialwith the in-situ optical monitoring system.
 11. The method of claim 10,wherein measuring a spectrum of light reflected from the metal materialcomprises polishing a blanket copper wafer.
 12. The method of claim 9,wherein generating the metal reference spectrum includes calculating themetal reference spectrum from an optical model.
 13. The method of claim1, wherein the metal layer consists of copper, aluminum or tungsten. 14.The method of claim 1, further comprising generating a sequence ofvalues from the sequence of normalized spectra, fitting a function tothe sequence of values, determining a projected time at which thefunction reaches a target value, and determining at least one of apolishing endpoint or an adjustment for a polishing rate based on theprojected time.
 15. The method of claim 14, further comprising, for eachnormalized spectrum from the sequence of normalized spectra, finding abest matching reference spectrum from a library having a plurality ofreference spectra, and wherein generating the sequence of valuesincludes, for each best matching reference spectrum, determining a valueassociated with the best matching reference spectrum.
 16. The method ofclaim 14, further comprising, for each normalized spectrum from thesequence of normalized spectra, finding a position or width of a peak orvalley of the normalized spectrum to generate a sequence of position orwidth values, and wherein the sequence of values is generated from thesequence of position or width values.
 17. The method of claim 14,further comprising halting the polishing when the function matches orexceeds a target value.
 18. The method of claim 14, wherein thesubstrate includes a plurality of zones, and a polishing rate of eachzone is independently controllable by an independently variablepolishing parameter, and further comprising: for each zone, generating asequence of normalized spectra and generating a sequence of values fromthe sequence of normalized spectra; and based on the sequence of valuesfor each zone, adjusting the polishing parameter for at least one zoneto adjust the polishing rate of the at least one zone such that theplurality of zones have a smaller difference in thickness at thepolishing endpoint than without such adjustment.
 19. The method of claim1, wherein polishing the substrate comprises a back-end-of-line portionof an integrated circuit fabrication process.